Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742, Republic of Korea.
Macromol Rapid Commun. 2013 Feb 25;34(4):355-61. doi: 10.1002/marc.201200614. Epub 2012 Dec 27.
Organic nonvolatile resistive switching memory is developed via selective incorporation of fullerene derivatives, [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), into the nanostructure of self-assembled poly(styrene-b-methyl methacrylate) (PS₁₀ -b-PMMA₁₃₀) diblock copolymer. PS₁₀ -b-PMMA₁₃₀ diblock copolymer provides a spatially ordered nanotemplate with a 10-nm PS nanosphere domain surrounded by a PMMA matrix. Spin casting of the blend solution of PS₁₀ -b-PMMA₁₃₀ and PCBM spontaneously forms smooth films without PCBM aggregation in which PCBM molecules are incorporated within a PS nanosphere domain of PS₁₀ -b-PMMA₁₃₀ nanostructure by preferential intermixing propensity of PCBM and PS. Based on the well-defined PS₁₀-b-PMMA ₁₃₀/PCBM nanostructure, resistive random access memory (ReRAM) exhibits significantly improved bipolar-switching behavior with stable and reproducible properties at low operating voltages (RESET at 1.3 V and SET at -1.5 V) under ambient conditions. Finally, flexible memory devices are achieved using a nanostructured PS₁₀ -b-PMMA₁₃₀ /PCBM composite in which no significant degradation of electrical properties is observed before and after bending.
通过将富勒烯衍生物[6,6]-苯基-C61 丁酸甲酯（PCBM）选择性地掺入自组装的聚（苯乙烯-b-甲基丙烯酸甲酯）（PS₁₀-b-PMMA₁₃₀）两嵌段共聚物的纳米结构中，开发出有机非易失性电阻式存储器件。PS₁₀-b-PMMA₁₃₀两嵌段共聚物提供了一个具有 10nm PS 纳米球畴的空间有序纳米模板，周围是 PMMA 基质。PS₁₀-b-PMMA₁₃₀ 和 PCBM 的共混溶液的旋涂在没有 PCBM 聚集的情况下自发形成光滑的薄膜，其中 PCBM 分子通过 PCBM 和 PS 的优先混合倾向掺入 PS₁₀-b-PMMA₁₃₀ 纳米结构的 PS 纳米球畴内。基于明确的 PS₁₀-b-PMMA ₁₃₀/PCBM 纳米结构，电阻式随机存取存储器（ReRAM）在环境条件下，在低工作电压（重置为 1.3V，设置为-1.5V）下，表现出显著改善的双极开关行为，具有稳定和可重复的性能。最后，使用纳米结构化的 PS₁₀-b-PMMA₁₃₀/PCBM 复合材料实现了柔性存储器件，在弯曲前后，其电性能没有明显下降。
