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全量子点红外发光二极管。

All-Quantum-Dot Infrared Light-Emitting Diodes.

机构信息

The Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto , 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.

Advanced Technology Materials & Research, Research & Development, Toyota Motor Europe , Hoge Wei 33, Toyota Technical Centre, B-1930 Zaventem, Belgium.

出版信息

ACS Nano. 2015 Dec 22;9(12):12327-33. doi: 10.1021/acsnano.5b05617. Epub 2015 Nov 20.

Abstract

Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

摘要

胶体量子点(CQDs)是红外电致发光器件的有前途的候选材料。迄今为止,基于 CQD 的发光二极管(LED)采用了夹在使用有机材料和无机氧化物构建的载流子传输层之间的 CQD 发射层。在此,我们报告了使用量子调谐材料的红外 LED,用于空穴传输层、电子传输层和发光层。我们成功地调整了每个基于 CQD 的组件的带隙和能带位置,以产生我们可以从 1220 调谐到 1622nm 的电致发光器件。发射 1350nm 的器件在 1.2V 的低开启电压下实现了高达 1.6%的峰值外量子效率,超过了先前报道的全无机 CQD LED。

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