Yang Xuyong, Ren Fuqiang, Wang Yue, Ding Tao, Sun Handong, Ma Dongling, Sun Xia Wei
Key Laboratory of Advanced Display and System Applications of Education of Ministry, Shanghai University, 149 Yanchang Road, Shanghai, 200072, P. R. China.
Institut National de la Recherche Scientifique (INRS), Universitédu Québec, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X1S2, Canada.
Sci Rep. 2017 Nov 7;7(1):14741. doi: 10.1038/s41598-017-15244-5.
PbS based quantum dots (QDs) have been studied in great detail for potential applications in electroluminescent devices operating at wavelengths important for telecommunications (1.3-1.6 μm). Despite the recent advances in field of quantum dot light-emitting diode (QLED), further improvements in near-infrared (NIR) emitting device performance are still necessary for the widespread use and commercialization of NIR emitting QLED technology. Here, we report a high-performance 1.51-μm emitting QLED with inverted organic-inorganic hybrid device architecture and PbS/CdS core-shell structured quantum dots as emitter. The resultant QLEDs show a record device performance for the QLEDs in 1.5 μm emission window, with a maximum radiance of 6.04 Wsr m and peak external quantum efficiency (EQE) of 4.12%, respectively.
基于硫化铅的量子点（QDs）已针对在电信重要波长（1.3 - 1.6μm）下工作的电致发光器件的潜在应用进行了详细研究。尽管量子点发光二极管（QLED）领域最近取得了进展，但对于近红外（NIR）发光器件性能的进一步改进，对于NIR发光QLED技术的广泛应用和商业化而言仍然是必要的。在此，我们报告了一种具有倒置有机 - 无机混合器件结构且以硫化铅/硫化镉核壳结构量子点作为发光体的高性能1.51μm发光QLED。所得的QLED在1.5μm发射窗口中展现出创纪录的器件性能，最大辐射亮度分别为6.04 Wsr⁻¹ m⁻²以及峰值外量子效率（EQE）为4.12%。
