Yamamoto Ayako, Takeshita Nao, Terakura Chieko, Tokura Yoshinori
Strong Correlation Physics Division, RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan.
Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan.
Nat Commun. 2015 Dec 1;6:8990. doi: 10.1038/ncomms9990.
How to enhance the superconducting critical temperature (Tc) has been a primary issue since the discovery of superconductivity. The highest Tc reported so far is 166 K in HgBa2Ca2Cu3O8+δ (Hg1223) at high pressure of 23 GPa, as determined with the reduction onset, but not zero, of resistivity. To clarify the possible condition of the real maximum Tc, it is worth revisiting the effects of pressure on Tc in the highest Tc family. Here we report a systematic study of the pressure dependence of Tc in HgBa2CaCu2O6+δ (Hg1212) and Hg1223 with the doping level from underdoped to overdoped. The Tc with zero resistivity is probed with a cubic-anvil-type apparatus that can produce hydrostatic pressures. Variation, not only increase but also decrease, of Tc in Hg1212 and Hg1223 with pressure strongly depends on the initial doping levels. In particular, we confirm a maximum Tc of 153 K at 22 GPa in slightly underdoped Hg1223.
自超导现象被发现以来,如何提高超导临界温度(Tc)一直是一个主要问题。目前报道的最高Tc是在23 GPa的高压下,HgBa2Ca2Cu3O8+δ(Hg1223)中的166 K,这是通过电阻率下降起始点而非零来确定的。为了阐明实际最大Tc的可能条件,值得重新审视压力对最高Tc家族中Tc的影响。在此,我们报告了对HgBa2CaCu2O6+δ(Hg1212)和Hg1223中Tc随压力变化的系统研究,其掺杂水平从欠掺杂到过掺杂。使用能够产生静水压力的立方砧型装置探测零电阻率时的Tc。Hg1212和Hg1223中Tc随压力的变化,不仅有增加,也有减少,这强烈依赖于初始掺杂水平。特别是,我们证实了在22 GPa下,稍微欠掺杂的Hg1223的最大Tc为153 K。