Strain induced topological phase transitions in monolayer honeycomb structures of group-V binary compounds.
作者信息
Nie Yaozhuang, Rahman Mavlanjan, Wang Daowei, Wang Can, Guo Guanghua
机构信息
School of Physics and Electronics, Central South University, Changsha, 410083 China.
出版信息
Sci Rep. 2015 Dec 10;5:17980. doi: 10.1038/srep17980.
Abstract
We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice strain. During their stretchable regime, they all exhibit metal-indirect gap semiconductor-direct gap semiconductor-topological insulator (TI) transitions with increasing strain from negative (compressive) to positive (tensile) values. The topological phase transition results from the band inversion at the Γ point which is due to the evolution of bonding and anti-bonding states under lattice strain.
摘要
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