Karthik R, Kannadassan D, Baghini Maryam Shojaei, Mallick P S
J Nanosci Nanotechnol. 2015 Dec;15(12):9938-43. doi: 10.1166/jnn.2015.11636.
This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of < 115 ppm/V2 and a low leakage current density of 4.457 x 10(-11) A/cm2 at 3 V are achieved which are suitable for analog and mixed signal applications. We found that the anodization voltage played a major role in electrical and structural properties of the thin film. This work suggests that the anodization method can offer crystalline multilayer dielectric stack required for high performance MIM capacitor.
本文介绍了采用阳极氧化技术制备Al2O3/TiO2/Al2O3金属-绝缘体-金属（MIM）电容器。实现了大于3.5 fF/μm2的高电容密度、小于115 ppm/V2的低电容二次电压系数以及在3 V时4.457×10(-11) A/cm2的低漏电流密度，这些特性适用于模拟和混合信号应用。我们发现阳极氧化电压对薄膜的电学和结构性能起主要作用。这项工作表明，阳极氧化方法能够提供高性能MIM电容器所需的晶体多层介质堆栈。
