Roest Aarnoud, Mauczok Rüdiger, Reimann Klaus, van Leuken-Peters Linda, Klee Mareike
NXP Semiconductors, Eindhoven, the Netherlands.
IEEE Trans Ultrason Ferroelectr Freq Control. 2009 Mar;56(3):425-8. doi: 10.1109/TUFFC.2009.1060.
This paper shows for the first time integrated thin film ferroelectric metal-insulator-metal capacitors on silicon with a record high capacitance density above 100 nF/mm(2) combined with a breakdown voltage of 90 V and a lifetime exceeding 10 years at 85 degrees C and 5 V. The high capacitance density was obtained by a combination of material optimizations resulting in a dielectric constant of 1600, and stacking of capacitors. The reliability of these ferroelectric capacitors was studied in detail with accelerated lifetime testing. The high performance of the integrated capacitors in this paper shows great potential for applications demanding high capacitance densities combined with electrostatic discharge protection.
本文首次展示了在硅上集成的薄膜铁电金属-绝缘体-金属电容器，其具有创纪录的高电容密度，超过100 nF/mm²，同时击穿电压为90 V，在85℃和5 V条件下寿命超过10年。通过材料优化组合（介电常数达到1600）和电容器堆叠实现了高电容密度。通过加速寿命测试详细研究了这些铁电电容器的可靠性。本文中集成电容器的高性能显示出在要求高电容密度并兼具静电放电保护的应用中具有巨大潜力。
