Department of Physics, University at Buffalo, The State University of New York, Buffalo, New York 14260, USA.
Department of Physics, University of Tokyo, Hongo, Tokyo 113-0033, Japan.
Phys Rev Lett. 2015 Dec 11;115(24):247401. doi: 10.1103/PhysRevLett.115.247401. Epub 2015 Dec 8.
We measure the Hall conductivity of a two-dimensional electron gas formed at a GaAs/AlGaAs heterojunction in the terahertz regime close to the cyclotron resonance frequency using highly sensitive Faraday rotation measurements. The sample is electrically gated, allowing the electron density to be changed continuously by more than a factor of 3. We observe clear plateaulike and steplike features in the Faraday rotation angle vs electron density and magnetic field (Landau-level filling factor) even at fields or frequencies very close to cyclotron resonance absorption. These features are the high frequency manifestation of quantum Hall plateaus-a signature of topologically protected edge states. We observe both odd and even filling factor plateaus and explore the temperature dependence of these plateaus. Although dynamical scaling theory begins to break down in the frequency region of our measurements, we find good agreement with theory.
我们使用高度灵敏的法拉第旋转测量方法,在接近回旋共振频率的太赫兹区域测量了在 GaAs/AlGaAs 异质结中形成的二维电子气的 Hall 电导率。该样品采用电控门,可使电子密度连续变化超过 3 倍。即使在非常接近回旋共振吸收的磁场(朗道能级填充因子)或频率下,我们也观察到法拉第旋转角与电子密度的明显平台状和阶跃状特征。这些特征是量子霍尔平台的高频表现——拓扑保护边缘状态的特征。我们观察到奇数和偶数填充因子平台,并研究了这些平台的温度依赖性。尽管动态标度理论在我们测量的频率区域开始失效,但我们发现与理论有很好的一致性。