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高斯限制下GaAs量子点中存在磁场时偏心D0施主的结合能与磁化率：一种改进处理

The Binding Energy and Magnetic Susceptibility of an Off-Centre D0 Donor in the Presence of a Magnetic Field in a GaAs Quantum Dot with Gaussian Confinement: An Improved Treatment.

作者信息

Boda Aalu, Chatterjee Ashok

出版信息

J Nanosci Nanotechnol. 2015 Sep;15(9):6472-7. doi: 10.1166/jnn.2015.10900.

DOI:10.1166/jnn.2015.10900
PMID:26716201
Abstract

The binding energy and susceptibility of an off-centre neutral hydrogenic donor impurity (D0) trapped in a three-dimensional Gaussian quantum dot in the presence of an applied magnetic field are obtained by a variational method with an improved wave function. The results are obtained as a function of the quantum dot size, position of the impurity and the confinement strength.

摘要

通过采用改进波函数的变分法，得到了存在外加磁场时，三维高斯量子点中偏心中性类氢施主杂质（D0）的结合能和磁化率。结果作为量子点尺寸、杂质位置和约束强度的函数给出。

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