Boda Aalu, Chatterjee Ashok
J Nanosci Nanotechnol. 2015 Sep;15(9):6472-7. doi: 10.1166/jnn.2015.10900.
The binding energy and susceptibility of an off-centre neutral hydrogenic donor impurity (D0) trapped in a three-dimensional Gaussian quantum dot in the presence of an applied magnetic field are obtained by a variational method with an improved wave function. The results are obtained as a function of the quantum dot size, position of the impurity and the confinement strength.
通过采用改进波函数的变分法,得到了存在外加磁场时,三维高斯量子点中偏心中性类氢施主杂质(D0)的结合能和磁化率。结果作为量子点尺寸、杂质位置和约束强度的函数给出。