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揭示施主杂质位置对磁场下应变I型和II型核/壳量子点电子性质的作用。

Unveiling the Role of Donor Impurity Position on the Electronic Properties in Strained Type I and Type II Core/Shell Quantum Dots under Magnetic Field.

作者信息

Pérez Laura M, Aghoutane Noreddine, Laroze David, Díaz Pablo, El-Yadri Mohamed, Feddi El Mustapha

机构信息

Departamento de Física, FACI, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile.

Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica 1000000, Chile.

出版信息

Materials (Basel). 2023 Oct 2;16(19):6535. doi: 10.3390/ma16196535.

Abstract

In this theoretical investigation, we delve into the significant effects of donor impurity position within core/shell quantum dot structures: type I (CdTe/ZnS) and type II (CdTe/CdS). The donor impurity's precise location within both the core and the shell regions is explored to unveil its profound influence on the electronic properties of these nanostructures. Our study investigates the diamagnetic susceptibility and binding energy of the donor impurity while considering the presence of an external magnetic field. Moreover, the lattice mismatch-induced strain between the core and shell materials is carefully examined as it profoundly influences the electronic structure of the quantum dot system. Through detailed calculations, we analyze the strain effects on the conduction and valence bands, as well as the electron and hole energy spectrum within the core/shell quantum dots. The results highlight the significance of donor impurity position as a key factor in shaping the behaviors of impurity binding energy and diamagnetic susceptibility. Furthermore, our findings shed light on the potential for tuning the electronic properties of core/shell quantum dots through precise impurity positioning and strain engineering.

摘要

在这项理论研究中,我们深入探讨了施主杂质位置在核/壳量子点结构(I型(CdTe/ZnS)和II型(CdTe/CdS))中的显著影响。研究了施主杂质在核区和壳区的精确位置,以揭示其对这些纳米结构电子性质的深远影响。我们的研究在考虑外部磁场存在的情况下,研究了施主杂质的抗磁磁化率和结合能。此外,还仔细研究了核材料与壳材料之间晶格失配引起的应变,因为它对量子点系统的电子结构有深远影响。通过详细计算,我们分析了应变对核/壳量子点内导带和价带以及电子和空穴能谱的影响。结果突出了施主杂质位置作为塑造杂质结合能和抗磁磁化率行为的关键因素的重要性。此外,我们的研究结果揭示了通过精确的杂质定位和应变工程来调节核/壳量子点电子性质的潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1795/10574289/3f125e5b0c34/materials-16-06535-g001.jpg

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