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磁场对 Ga1-xInxNyAs1-y/GaAs 量子阱中浅施主杂质束缚能的影响。

The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well.

机构信息

Physics Department, Cumhuriyet University, Sivas, 58140, Turkey.

出版信息

Nanoscale Res Lett. 2012 Oct 24;7(1):586. doi: 10.1186/1556-276X-7-586.

DOI:10.1186/1556-276X-7-586
PMID:23095253
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3519723/
Abstract

Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-xInxNyAs1-y/GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.

摘要

利用变分方法，我们研究了磁场、杂质位置以及氮和铟浓度对 Ga1-xInxNyAs1-y/GaAs 量子阱中杂质结合能的影响。我们的计算揭示了杂质结合能对所施加磁场、杂质位置以及氮和铟浓度的依赖关系。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/429f/3519723/c576dd11eee6/1556-276X-7-586-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/429f/3519723/2791c5023433/1556-276X-7-586-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/429f/3519723/b76a80633d6e/1556-276X-7-586-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/429f/3519723/c576dd11eee6/1556-276X-7-586-3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/429f/3519723/2791c5023433/1556-276X-7-586-1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/429f/3519723/b76a80633d6e/1556-276X-7-586-2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/429f/3519723/c576dd11eee6/1556-276X-7-586-3.jpg

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Confined electron and hydrogenic donor states in a spherical quantum dot of GaAs-Ga1-xAlxAs.GaAs-Ga1-xAlxAs球形量子点中的受限电子和类氢施主态
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