Ha Young-Geun
J Nanosci Nanotechnol. 2015 Sep;15(9):6617-20. doi: 10.1166/jnn.2015.10718.
We report on the design, preparation, and electrical properties of novel solution-processed organic-inorganic hybrid dielectric films for the low-voltage operation of organic field-effect transistors (OFETs). Hybrid dielectric thin films (-20 nm thick) are easily fabricated by spin-coating a zirconium chloride precursor/organic additive reagent mixture, followed by annealing at low temperatures (-150 degrees C). The smooth and transparent hybrid dielectrics exhibit great insulating properties (leakage current densities -10(-7) A/cm2 at 2 MV/cm), high capacitance (170 nF/cm2). OFETs fabricated with hybrid dielectric and pentacene semiconductor function great at relatively low voltage (mobility: 1 cm2/V x s, on/off current ratio: 10(5)).
我们报道了用于有机场效应晶体管（OFET）低压操作的新型溶液处理有机-无机混合介电薄膜的设计、制备及电学性能。通过旋涂氯化锆前驱体/有机添加剂试剂混合物，随后在低温（-150℃）下退火，可轻松制备出厚度为-20nm的混合介电薄膜。光滑透明的混合电介质具有优异的绝缘性能（在2MV/cm时漏电流密度为-10^(-7)A/cm²）、高电容（170nF/cm²）。用混合电介质和并五苯半导体制造的OFET在相对较低的电压下表现出色（迁移率：1cm²/V·s，开/关电流比：10^5）。
