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光生电荷转移态与磁化电荷转移态之间的相互作用对磁电耦合的影响

Interaction Between Optically-Generated Charge-Transfer States and Magnetized Charge-Transfer States toward Magneto-Electric Coupling.

作者信息

Li Mingxing, He Lei, Xu Hengxing, Shao Ming, Tisdale Jeremy, Hu Bin

机构信息

Department of Materials Science and Engineering, University of Tennessee-Knoxville , Knoxville, Tennessee 37996, United States.

出版信息

J Phys Chem Lett. 2015 Nov 5;6(21):4319-25. doi: 10.1021/acs.jpclett.5b01838. Epub 2015 Oct 16.

Abstract

This article reports the magneto-dielectric studies on the coupling between optically generated CT states and magnetized CT states based on thin-film devices with the architecture of ITO/TPD:BBOT/TPD/Co/Al. The magnetized CT states are generated at the Co/TPD interface, generating a magneto-dielectric response with a broad, non-Lorentzian line-shape. The optically generated CT states are formed at the TPD:BBOT interfaces in the heterojunction under photoexcitation, leading to a magneto-dielectric signal with a narrow, Lorentzian line-shape. We find that combining the optically generated CT states and magnetized CT states yields a new magneto-dielectric signal with distinctive line-shape and amplitude in the ITO/TPD:BBOT/TPD/Co/Al device. The magneto-dielectric analysis indicates that there exists a coupling between optically generated CT states and magnetized CT states through the interactions between the magnetic Co/TPD interface and the optically excited TPD:BBOT heterojunction. Furthermore, we show that the coupling between optically generated CT states and magnetized CT states experiences Coulomb interactions and spin-orbital interaction by changing (i) the density of optically generated CT states and (ii) the separation distance between optically generated CT states and magnetized CT states. Clearly, this coupling provides a new approach to mutually tune magnetic and electronic properties through thin-film engineering by combining magnetic and organic materials.

摘要

本文报道了基于ITO/TPD:BBOT/TPD/Co/Al结构的薄膜器件,对光生电荷转移(CT)态与磁化CT态之间耦合的磁电研究。磁化CT态在Co/TPD界面处产生,产生具有宽的、非洛伦兹线形的磁电响应。光生CT态在光激发下于异质结的TPD:BBOT界面处形成,导致具有窄的、洛伦兹线形的磁电信号。我们发现,在ITO/TPD:BBOT/TPD/Co/Al器件中,将光生CT态与磁化CT态相结合会产生一种具有独特线形和幅度的新磁电信号。磁电分析表明,通过磁性Co/TPD界面与光激发的TPD:BBOT异质结之间的相互作用,光生CT态与磁化CT态之间存在耦合。此外,我们表明,通过改变(i)光生CT态的密度和(ii)光生CT态与磁化CT态之间的间距,光生CT态与磁化CT态之间的耦合会经历库仑相互作用和自旋-轨道相互作用。显然,这种耦合通过结合磁性和有机材料,为通过薄膜工程相互调节磁性和电子性质提供了一种新方法。

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