Kim Soon Kon, Choi Pyung Ho, Kim Sang Sub, Kim Hyun Woo, Lee Na Young, Choi Byoung Deog
J Nanosci Nanotechnol. 2015 Oct;15(10):7508-12. doi: 10.1166/jnn.2015.11169.
In this study, we prepared solution-based In-Ga-ZnO thin film transistors (IGZO TFTs) having a multistacked active layer. The solution was prepared using an In:Zn = 1:1 mole ratio with variation in Ga content, and the TFTs were fabricated by stacking layers from the prepared solutions. After we measured the mobility of each stacked layer, the saturation mobility showed values of 0.8, 0.6 and 0.4 (cm2/Vs), with an overall decrease in electrical properties. The interface formed between the each layers affected the current path, resulting in reduced electrical performance. However, when the gate bias VG = 10 V was applied for 1500 s, the threshold voltage shift decreased in the stack. The uniformity of the active layer was improved in the stacked active layer by filling the hole formed during pre-baking, resulting in improved device stability. Also, the indium ratio was increased to enhance the mobility from 0.86 to 3.47. These results suggest high mobility and high stability devices can be produced with multistacked active layers.
在本研究中，我们制备了具有多层堆叠有源层的溶液基铟镓锌氧化物薄膜晶体管（IGZO TFT）。使用铟与锌摩尔比为1:1且镓含量不同的溶液进行制备，并通过从制备的溶液中逐层堆叠来制造TFT。在测量了每个堆叠层的迁移率后，饱和迁移率的值分别为0.8、0.6和0.4（cm²/Vs），电学性能总体下降。各层之间形成的界面影响了电流路径，导致电性能降低。然而，当施加10 V的栅极偏压VG持续1500 s时，堆叠中的阈值电压偏移减小。通过填充预烘烤过程中形成的孔洞，堆叠有源层中有源层的均匀性得到改善，从而提高了器件稳定性。此外，铟比例增加，迁移率从0.86提高到3.47。这些结果表明，多层堆叠有源层可以制造出具有高迁移率和高稳定性的器件。
