School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.
ACS Appl Mater Interfaces. 2012 Aug;4(8):4001-5. doi: 10.1021/am3008278. Epub 2012 Jul 25.
Thin-film transistors (TFTs) with multistacked active layers (MSALs) have been studied to improve their electrical performance. The performance enhancement with MSALs has been attributed to higher film density in the effective channel; the density was higher because the porosities of the sublayers were reduced by filling with solution. The proposed TFT with MSALs exhibited an enhanced field-effect mobility of 2.17 cm(2)/(V s) and a threshold voltage shift under positive bias stress of 8.2 V, compared to 1.21 cm(2)/(V s) and 18.1 V, respectively, for the single active layer TFT.
多层有源层（MSAL）的薄膜晶体管（TFT）已经过研究，以提高其电气性能。MSAL 的性能提升归因于有效沟道中更高的薄膜密度；由于子层的孔隙率通过溶液填充而降低，因此密度更高。与单有源层 TFT 的 1.21 cm²/（V s）和 18.1 V 相比，具有 MSAL 的提议 TFT 表现出增强的场效应迁移率为 2.17 cm²/（V s）和正偏压应力下的阈值电压漂移为 8.2 V。
