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氢化二硫化钼单层的稳定性和电子性质:第一性原理研究

Stability and Electronic Properties of Hydrogenated MoS2 Monolayer: A First-Principles Study.

作者信息

Zhang Weibin, Zhang Zhijun, Yang Woochul

出版信息

J Nanosci Nanotechnol. 2015 Oct;15(10):8075-80.

Abstract

First-principles total energy studies are used to investigate the stability of hydrogenated MoS2 monolayer (MoS2-Hx) (x = 1-8), which is a compound with different numbers of H atoms adsorbed on the MoS2 surface. Energetically, the S-top side of the MoS2 is found to be the most favorable for H-adsorption. H2S and graphene are well-known to be stable, and MoS2-Hx is predicted to be even more stable because its binding energy is lower than that of H2S and its formation energy and adsorption energy are lower than those of graphene. The analysis of the electronic density distribution and the orbital hybrid also shows that MoS2-Hx forms stable structures. In addition, the influence of the number of the adsorbed H-atoms in the MoS2-Hx on the electronic structure of the compound is also investigated. The MoS2-Hx band structure exhibits a dispersion and the MoS2-Hx band gap gradually decreases from 1.72 eV to 0 eV as the number of adsorbed H atoms increases. The corresponding work function increases as a result of the strengthening of the dipole moment formed between the H atoms that are adsorbed and the hydrogenated MoS2.

摘要

第一性原理总能研究用于探究氢化二硫化钼单分子层(MoS2-Hx)(x = 1-8)的稳定性,该化合物是在二硫化钼表面吸附有不同数量氢原子的物质。从能量角度来看,发现二硫化钼的硫顶侧最有利于氢吸附。众所周知,硫化氢和石墨烯是稳定的,并且预测MoS2-Hx会更稳定,因为其结合能低于硫化氢,其形成能和吸附能低于石墨烯。对电子密度分布和轨道杂化的分析也表明MoS2-Hx形成了稳定结构。此外,还研究了MoS2-Hx中吸附氢原子的数量对该化合物电子结构的影响。随着吸附氢原子数量的增加,MoS2-Hx的能带结构呈现出色散,且MoS2-Hx的带隙从1.72 eV逐渐减小到0 eV。由于吸附的氢原子与氢化二硫化钼之间形成的偶极矩增强,相应的功函数增加。

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