Kim Wan-Tae, Kim In-Ho, Choi Won-Youl
J Nanosci Nanotechnol. 2015 Oct;15(10):8161-5. doi: 10.1166/jnn.2015.11278.
To improve sensing performance, the metal oxide semiconductor (MOS) gas sensor needs to have amuch bigger specific surface area in the active layer, lower power and higher sensitivity. TiO2 nanotube arrays were used for the active layer of a MOS gas sensor because they are chemically stable and electrically semi conductive. To obtain clean, open window nanotubes, two-step anodic oxidation was conducted. The diameter of the window and length of the nanotubes were 60 nm and 5.5 μm, respectively. TiO2 nanotube arrays were transplanted by the SnO2 adhesion layer. The SnO2 adhesion layer had a nanoparticle diameter of 30 nm and a thickness of 4 μm. The sensitivity increased with the CO gas concentration and was 0.061 at 300 ppm. The response was very quick. A power consumption of 80 mW was measured with an effective gas detection performance.
为了提高传感性能，金属氧化物半导体（MOS）气体传感器的活性层需要具有更大的比表面积、更低的功耗和更高的灵敏度。TiO2纳米管阵列被用作MOS气体传感器的活性层，因为它们化学稳定且具有半导电性。为了获得清洁、开口的纳米管，进行了两步阳极氧化。窗口直径和纳米管长度分别为60nm和5.5μm。TiO2纳米管阵列通过SnO2粘附层进行移植。SnO2粘附层的纳米颗粒直径为30nm，厚度为4μm。灵敏度随CO气体浓度的增加而提高，在300ppm时为0.061。响应非常迅速。在有效气体检测性能下测得的功耗为80mW。
