School of Materials Science and Engineering, Gwangju Institute of Science and Technology , Gwangju 500-712, Republic of Korea.
Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology , Gwangju 500-712, Republic of Korea.
ACS Appl Mater Interfaces. 2016 Jan 27;8(3):1565-70. doi: 10.1021/acsami.5b09974. Epub 2016 Jan 13.
We report on the optical and electrical properties of MgxZn1-xO/Ag/MgxZn1-xO transparent conductive electrodes. The transmittance and sheet resistance of MgxZn1-xO/Ag/MgxZn1-xO multilayers deposited at room temperature were strongly dependent on the thickness and surface morphology of Ag layer. The optical absorption edge of MgxZn1-xO/Ag/MgxZn1-xO showed a blue shift with increasing Mg composition due to the increased band gap of MgxZn1-xO. The Haack figure of merit value of Mg0.28Zn0.72O/Ag/Mg0.28Zn0.72O with a 14 nm-thick Ag layer, which has a sheet resistance of 6.36 Ω/sq and an average transmittance of 89.2% at wavelengths in the range from 350 to 780 nm, was 69% higher than that of a ZnO/Ag/ZnO multilayer electrode. These results indicate that MgxZn1-xO/Ag/MgxZn1-xO multilayers, which also show low surface roughness, can be used as highly conductive transparent electrodes in various optoelectronic devices operating over a wide wavelength region.
我们报告了 MgxZn1-xO/Ag/MgxZn1-xO 透明导电电极的光学和电学性能。在室温下沉积的 MgxZn1-xO/Ag/MgxZn1-xO 多层膜的透光率和方阻强烈依赖于 Ag 层的厚度和表面形貌。由于 MgxZn1-xO 的能带隙增加,MgxZn1-xO/Ag/MgxZn1-xO 的光学吸收边缘随着 Mg 成分的增加而出现蓝移。具有 14nm 厚 Ag 层的 Mg0.28Zn0.72O/Ag/Mg0.28Zn0.72O 的 Haack 优值,其方阻为 6.36 Ω/sq,在 350nm 至 780nm 波长范围内的平均透光率为 89.2%,比 ZnO/Ag/ZnO 多层电极高 69%。这些结果表明,MgxZn1-xO/Ag/MgxZn1-xO 多层膜还具有低表面粗糙度,可作为在宽波长范围内工作的各种光电设备的高导电透明电极。