dos Santos L Fernandes, Castelano L K, Padilha J X, Pusep Y, Marques G E, Smirnov D, Bakarov A K, Toropov A I, Lopez-Richard V
Universidade Federal de Santa Catarina, 89065-300 Blumenau, Santa Catarina, Brazil.
J Phys Condens Matter. 2016 Feb 10;28(5):055503. doi: 10.1088/0953-8984/28/5/055503. Epub 2016 Jan 14.
This work aims to investigate the effects of magnetic field strength and direction on the electronic properties and optical response of GaAs/AlGaAs-based heterostructures. An investigation of the excitonic spin-splitting of a disordered multiple quantum well embedded in a wide parabolic quantum well is presented. The results for polarization-resolved photoluminescence show that the magnetic field dependencies of the excitonic spin-splitting and photoluminescence linewidth are crucially sensitive to magnetic field orientation. Our experimental results are in good agreement with the calculated Zeeman splitting obtained by the Luttinger model, which predicts a hybridization of the spin character of states in the valence band under tilted magnetic fields.
这项工作旨在研究磁场强度和方向对基于GaAs/AlGaAs的异质结构的电子性质和光学响应的影响。本文对嵌入宽抛物线量子阱中的无序多量子阱的激子自旋分裂进行了研究。偏振分辨光致发光的结果表明,激子自旋分裂和光致发光线宽的磁场依赖性对磁场取向极为敏感。我们的实验结果与通过卢廷格模型获得的计算塞曼分裂结果吻合良好,该模型预测在倾斜磁场下价带中态的自旋特性会发生杂化。