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外加电磁探针作用下垂直耦合量子点-环异质结构的电子结构。一种有限元方法。

Electronic structure of vertically coupled quantum dot-ring heterostructures under applied electromagnetic probes. A finite-element approach.

作者信息

Mora-Ramos M E, Vinasco J A, Laroze D, Radu A, Restrepo R L, Heyn Christian, Tulupenko V, Hieu Nguyen N, Phuc Huynh V, Ojeda J H, Morales A L, Duque C A

机构信息

Centro de Investigación en Ciencias-IICBA, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca, Morelos, Mexico.

Instituto de Alta Investigación, CEDENNA, Universidad de Tarapacá, Casilla 7D, Arica, Chile.

出版信息

Sci Rep. 2021 Feb 17;11(1):4015. doi: 10.1038/s41598-021-83583-5.

Abstract

We theoretically investigate the electron and hole states in a semiconductor quantum dot-quantum ring coupled structure, inspired by the recent experimental report by Elborg and collaborators (2017). The finite element method constitutes the numerical technique used to solve the three-dimensional effective mass equation within the parabolic band approximation, including the effects of externally applied electric and magnetic fields. Initially, the features of conduction electron states in the proposed system appear discussed in detail, under different geometrical configurations and values of the intensity of the aforementioned electromagnetic probes. In the second part, the properties of an electron-hole pair confined within the very kind of structure reported in the reference above are investigated via a model that tries to reproduce as close as possible the developed profile. In accordance, we report on the energies of confined electron and hole, affected by the influence of an external electric field, revealing the possibility of field-induced separate spatial localization, which may result in an indirect exciton configuration. In relation with this fact, we present a preliminary analysis of such phenomenon via the calculation of the Coulomb integral.

摘要

受埃尔伯格及其合作者(2017年)最近的实验报告启发,我们从理论上研究了半导体量子点 - 量子环耦合结构中的电子和空穴态。有限元方法是用于在抛物带近似下求解三维有效质量方程的数值技术,其中包括外部施加的电场和磁场的影响。首先,在不同的几何构型以及上述电磁探针强度值的情况下,详细讨论了所提出系统中传导电子态的特征。在第二部分中,通过一个试图尽可能精确地重现所发展轮廓的模型,研究了限制在上述参考文献中所报道的这种结构内的电子 - 空穴对的性质。相应地,我们报告了受外部电场影响的受限电子和空穴的能量,揭示了场致空间分离定位的可能性,这可能导致间接激子构型。关于这一事实,我们通过库仑积分的计算对此现象进行了初步分析。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7d2d/7889662/6a95bbf091de/41598_2021_83583_Fig1_HTML.jpg

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