Pradhan Nihar R, Garcia Carlos, Isenberg Bridget, Rhodes Daniel, Feng Simin, Memaran Shahriar, Xin Yan, McCreary Amber, Walker Angela R Hight, Raeliarijaona Aldo, Terrones Humberto, Terrones Mauricio, McGill Stephen, Balicas Luis
Department of Chemistry, Physics and Atmospheric Sciences, Jackson State University, Jackson, MS, 39217, USA.
National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA.
Sci Rep. 2018 Aug 24;8(1):12745. doi: 10.1038/s41598-018-30969-7.
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe, mechanically exfoliated onto a SiO layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 10 cm/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90° or nearly 180°. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe.
我们用机械剥离到生长在p型掺杂硅上的SiO层上的多层三斜相ReSe₂制备了双极场效应晶体管（FET）。与之前关于薄层（约2至3层）的报道不同，我们在具有近10个原子层的晶体中，在室温下提取到了超过10 cm²/V·s的场效应载流子迁移率。与由较薄层构建的FET相比，这些较厚的FET在传导时还显示出几乎为零的阈值栅极电压以及高的开/关电流比。我们还证明了利用这种双极性来制造逻辑元件或数字合成器是可行的。例如，我们证明了可以制造出简单的、栅极电压可调的相位调制器，其能够将输入信号的相位偏移90°或近180°。鉴于可以采用改进的架构来设计这些相同的元件，例如在h-BN上，以降低阈值栅极电压并提高载流子迁移率，有可能改善它们的特性，从而设计基于ReSe₂的超薄层逻辑元件。
