Reply to "Comment on 'Metal Semiconductor Field-Effect Transistor with MoS₂/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed'".
作者信息
Kim Jin Sung, Lee Hee Sung, Im Seongil
机构信息
Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
出版信息
ACS Nano. 2016 Feb 23;10(2):1716-7. doi: 10.1021/acsnano.5b08198. Epub 2016 Feb 4.