Liu Shuo, Phillabaum B, Carlson E W, Dahmen K A, Vidhyadhiraja N S, Qazilbash M M, Basov D N
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA.
Department of Physics, University of Illinois, Urbana-Champaign, Illinois 61801, USA.
Phys Rev Lett. 2016 Jan 22;116(3):036401. doi: 10.1103/PhysRevLett.116.036401.
We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.
我们报告了临界团簇技术在二氧化钒莫特金属-绝缘体转变中的首次应用。我们表明，通过扫描近场红外显微镜观察到的金属和绝缘水坑的几何通用性质与该系统在温度变化时接近随机场伊辛模型的临界状态相一致。由此产生的达到平衡的巨大障碍可能是与该系统中金属-绝缘体转变相关的异常稳健的滞后现象的根源。
