氧化钒薄膜中的电阻开关研究。

Rana Abhimanyu, Li Chuan, Koster Gertjan, Hilgenkamp Hans

Faculty of Science and Technology, and MESA+ Institute of Nanotechnology, University of Twente, Enschede, The Netherlands.

School of Engineering and Technology, BML Munjal University, Gurgaon, India.

Sci Rep. 2020 Feb 24;10(1):3293. doi: 10.1038/s41598-020-60373-z.

The hysteretic insulator-to-metal transition of VO is studied in detail for pulsed laser deposition grown thin films on TiO substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.

在温度和外加偏置电流变化的情况下，对脉冲激光沉积在TiO衬底上生长的VO薄膜的滞后绝缘体 - 金属转变进行了详细研究。该系统对于基于忆阻概念的新型电子学具有重要意义，特别是因为这些薄膜中的电阻转变发生在接近室温的温度。通过定制的温度扫描或电流脉冲引起的焦耳加热，可以在滞后相变的温度范围内可控地设置多个稳定电阻状态。