通过化学气相沉积由金属-有机配合物合成的原子 MoS2 单层。
Atomic MoS2 monolayers synthesized from a metal-organic complex by chemical vapor deposition.
机构信息
Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry Tsinghua University, Beijing 100084, China.
出版信息
Nanoscale. 2016 Feb 28;8(8):4486-90. doi: 10.1039/c5nr09089j.
The controllable synthesis of MoS2 monolayers is the key challenge for their practical applications. Here we report the chemical vapor deposition (CVD) growth of single layered MoS2 by utilizing a bifunctional precursor. This precursor is a metal-organic complex which supplies both Mo sources and organic seeding promoters for the efficient CVD growth of MoS2 monolayers. The successful growth of high quality MoS2 flakes indicates that the rational design of bifunctional precursors will open up a new way for the controllable CVD growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs).
单层 MoS2 的可控合成是其实际应用的关键挑战。在这里，我们报告了通过使用双功能前体制备单层 MoS2 的化学气相沉积（CVD）生长。该前体是一种金属有机络合物，为 MoS2 单层的高效 CVD 生长提供了 Mo 源和有机成核促进剂。高质量 MoS2 薄片的成功生长表明，双功能前体的合理设计将为二维（2D）过渡金属二硫属化物（TMDCs）的可控 CVD 生长开辟新途径。
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