Direct investigation of (sub-) surface preparation artifacts in GaAs based materials by FIB sectioning.

The introduction of preparation artifacts is almost inevitable when producing samples for (scanning) transmission electron microscopy ((S)TEM). These artifacts can be divided in extrinsic artifacts like damage processes and intrinsic artifacts caused by the deviations from the volume strain state in thin elastically strained material systems. The reduction and estimation of those effects is of great importance for the quantitative analysis of (S)TEM images. Thus, optimized ion beam preparation conditions are investigated for high quality samples. Therefore, the surface topology is investigated directly with atomic force microscopy (AFM) on the actual TEM samples. Additionally, the sectioning of those samples by a focused ion beam (FIB) is used to investigate the damage depth profile directly in the TEM. The AFM measurements show good quantitative agreement of sample height modulation due to strain relaxation to finite elements simulations. Strong indications of (sub-) surface damage by ion beams are observed. Their influence on high angle annular dark field (HAADF) imaging is estimated with focus on thickness determination by absolute intensity methods. Data consolidation of AFM and TEM measurements reveals a 3.5nm surface amorphization, negligible surface roughness on the scale of angstroms and a sub-surface damage profile in the range of up to 8.0nm in crystalline gallium arsenide (GaAs) and GaAs-based ternary alloys. A correction scheme for thickness evaluation of absolute HAADF intensities is proposed and applied for GaAs based materials.