Department of Physics and Astronomy, Institute of Applied Physics, and Research Institute of Advanced Materials, Seoul National University , Seoul 151-747, Korea.
KU-KIST Graduate School of Converging Science and Technology, Korea University , Seoul 136-701, Korea.
ACS Nano. 2016 Mar 22;10(3):3114-20. doi: 10.1021/acsnano.5b07905. Epub 2016 Feb 12.
We report the fabrication and characteristics of vertical microtube light-emitting diode (LED) arrays with a metal core inside the devices. To make the LEDs, gallium nitride (GaN)/indium gallium nitride (In(x)Ga(1-x)N)/zinc oxide (ZnO) coaxial microtube LED arrays were grown on an n-GaN/c-aluminum oxide (Al2O3) substrate. The microtube LED arrays were then lifted-off the substrate by wet chemical etching of the sacrificial ZnO microtubes and the silicon dioxide (SiO2) layer. The chemically lifted-off LED layer was then transferred upside-down on other supporting substrates. To create the metal cores, titanium/gold and indium tin oxide were deposited on the inner shells of the microtubes, forming n-type electrodes inside the metal-cored LEDs. The characteristics of the resulting devices were determined by measuring electroluminescence and current-voltage characteristic curves. To gain insights into the current-spreading characteristics of the devices and understand how to make them more efficient, we modeled them computationally.
我们报告了具有内置金属芯的垂直微管发光二极管(LED)阵列的制造和特性。为了制造这些 LED,我们在 n-GaN/c-氧化铝(Al2O3)衬底上生长了氮化镓(GaN)/铟镓氮(In(x)Ga(1-x)N)/氧化锌(ZnO)共轴微管 LED 阵列。然后,通过湿法化学蚀刻牺牲 ZnO 微管和二氧化硅(SiO2)层将微管 LED 阵列从衬底上取下。然后,将化学剥离的 LED 层倒置转移到其他支撑衬底上。为了制造金属芯,在微管的内壳上沉积了钛/金和氧化铟锡,在金属芯 LED 内部形成 n 型电极。通过测量电致发光和电流-电压特性曲线来确定所得器件的特性。为了深入了解器件的电流扩展特性并了解如何提高其效率,我们对其进行了计算建模。