Materials Science and Engineering Department, University of Tennessee, Knoxville, TN, 37996, USA.
Nanofabrication Research Laboratory, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37381, USA.
Small. 2016 Apr 6;12(13):1779-87. doi: 10.1002/smll.201503680. Epub 2016 Feb 10.
Focused helium and neon ion (He(+)/Ne(+)) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+)/Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposure process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. These results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.
聚焦氦和氖离子（He(+) / Ne(+)）束处理最近被用于推动直接写入纳米级合成的分辨率极限。无处不在的聚焦 He(+) / Ne(+)束作为下一代纳米制造工具的选择目前受到限制，原因是高能离子在基底中引起的亚表面和外围损伤。通过同步红外脉冲激光辅助过程，在硅中证明了聚焦 He(+) / Ne(+)离子暴露引起的亚表面损伤的原位缓解。脉冲激光辅助提供了高度局域的原位光热能量，从而将植入和缺陷浓度降低了 90%以上。激光辅助曝光工艺还显示可以减少 He(+)图案化石墨烯中的外围缺陷，这使得该工艺成为直接写入二维材料图案化的有吸引力的候选方案。这些结果为通过聚焦离子束进行高分辨率直接写入纳米级材料处理的适用性提供了必要的解决方案。
