Noh J H, Fowlkes J D, Timilsina R, Stanford M G, Lewis B B, Rack P D
Department of Materials Science, Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States.
ACS Appl Mater Interfaces. 2015 Feb 25;7(7):4179-84. doi: 10.1021/am508443s. Epub 2015 Feb 10.
In order to enhance the etch rate of electron-beam-induced etching, we introduce a laser-assisted focused electron-beam-induced etching (LA-FEBIE) process which is a versatile, direct write nanofabrication method that allows nanoscale patterning and editing. The results demonstrate that the titanium electron stimulated etch rate via the XeF2 precursor can be enhanced up to a factor of 6 times with an intermittent pulsed laser assist. The evolution of the etching process is correlated to in situ stage current measurements and scanning electron micrographs as a function of time. The increased etch rate is attributed to photothermally enhanced Ti-F reaction and TiF4 desorption and in some regimes enhanced XeF2 surface diffusion to the reaction zone.
为了提高电子束诱导蚀刻的蚀刻速率，我们引入了激光辅助聚焦电子束诱导蚀刻（LA-FEBIE）工艺，这是一种通用的直接写入纳米制造方法，可实现纳米级图案化和编辑。结果表明，通过XeF2前驱体的钛电子激发蚀刻速率在间歇脉冲激光辅助下可提高至6倍。蚀刻过程的演变与原位阶段电流测量以及作为时间函数的扫描电子显微镜图像相关。蚀刻速率的提高归因于光热增强的Ti-F反应和TiF4解吸，以及在某些情况下XeF2向反应区的表面扩散增强。
