NiFe/WS₂/Co结中的室温自旋阀效应。

Iqbal Muhammad Zahir, Iqbal Muhammad Waqas, Siddique Salma, Khan Muhammad Farooq, Ramay Shahid Mahmood

Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan.

Department of Physics &Astronomy, Georgia State University, Atlanta, GA 30303, USA.

Sci Rep. 2016 Feb 12;6:21038. doi: 10.1038/srep21038.

The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.

过渡金属二硫属化物（TMDCs）的二维（2D）层状电子材料最近被提议作为自旋电子学应用的新兴候选材料。在此，我们报道了从室温到4.2 K，NiFe/WS2/Co结中基于剥离的单层WS2层间的自旋阀效应。自旋阀效应中相对磁阻的比率从室温下的0.18%增加到4.2 K时的0.47%。我们观察到，随着温度降低，结电阻单调下降。这些结果表明，半导体WS2薄膜在NiFe和Co电极之间起到金属导电中间层的作用。