State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China.
Nat Commun. 2013;4:1921. doi: 10.1038/ncomms2935.
Graphene has various potential applications owing to its unique electronic, optical, mechanical and chemical properties, which are primarily based on its two-dimensional nature. Graphene-based vertical devices can extend the investigations and potential applications range to three dimensions, while interfacial properties are crucial for the function and performance of such graphene vertical devices. Here we report a general method to construct graphene vertical devices with controllable functions via choosing different interfaces between graphene and other materials. Two types of vertically conducting devices are demonstrated: graphene stacks sandwiched between two Au micro-strips, and between two Co layers. The Au|graphene|Au junctions exhibit large magnetoresistance with ratios up to 400% at room temperature, which have potential applications in magnetic field sensors. The Co|graphene|Co junctions display a robust spin valve effect at room temperature. The layer-by-layer assembly of graphene offers a new route for graphene vertical structures.
由于其独特的电子、光学、机械和化学性质，石墨烯具有各种潜在的应用，这些性质主要基于其二维性质。基于石墨烯的垂直器件可以将研究和潜在应用范围扩展到三维，而界面性质对于这种石墨烯垂直器件的功能和性能至关重要。在这里，我们报告了一种通过在石墨烯和其他材料之间选择不同的界面来构建具有可控功能的石墨烯垂直器件的通用方法。展示了两种类型的垂直传导器件：夹在两个 Au 微带之间和两个 Co 层之间的石墨烯堆叠。Au|graphene|Au 结在室温下表现出高达 400%的大磁电阻，这在磁场传感器中有潜在的应用。Co|graphene|Co 结在室温下显示出稳健的自旋阀效应。石墨烯的逐层组装为石墨烯垂直结构提供了一条新途径。
