Viteau M, Reveillard M, Kime L, Rasser B, Sudraud P, Bruneau Y, Khalili G, Pillet P, Comparat D, Guerri I, Fioretti A, Ciampini D, Allegrini M, Fuso F
Orsay Physics, TESCAN Orsay, 95 Avenue des Monts Auréliens - ZA Saint-Charles - 13710 Fuveau, France.
Laboratoire Aimé Cotton, CNRS, Université Paris-Sud, ENS Cachan, Bât. 505, 91405 Orsay, France.
Ultramicroscopy. 2016 May;164:70-7. doi: 10.1016/j.ultramic.2015.12.007. Epub 2016 Feb 11.
We demonstrate a prototype of a Focused Ion Beam machine based on the ionization of a laser-cooled cesium beam and adapted for imaging and modifying different surfaces in the few-tens nanometer range. Efficient atomic ionization is obtained by laser promoting ground-state atoms into a target excited Rydberg state, then field-ionizing them in an electric field gradient. The method allows obtaining ion currents up to 130pA. Comparison with the standard direct photo-ionization of the atomic beam shows, in our conditions, a 40-times larger ion yield. Preliminary imaging results at ion energies in the 1-5keV range are obtained with a resolution around 40nm, in the present version of the prototype. Our ion beam is expected to be extremely monochromatic, with an energy spread of the order of the eV, offering great prospects for lithography, imaging and surface analysis.
我们展示了一种基于激光冷却铯束电离的聚焦离子束机器原型，该原型适用于对几十纳米范围内的不同表面进行成像和改性。通过激光将基态原子激发到目标里德堡激发态，然后在电场梯度中对其进行场电离，可实现高效的原子电离。该方法能够获得高达130pA的离子电流。在我们的条件下，与原子束的标准直接光电离相比，离子产率提高了40倍。在该原型的当前版本中，在1-5keV范围内的离子能量下获得了初步成像结果，分辨率约为40nm。我们的离子束预计具有极高的单色性，能量展宽约为电子伏特量级，这为光刻、成像和表面分析提供了广阔前景。
