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基于液晶偶氮苯聚合物的光输入/电输出存储元件。

Optical Input/Electrical Output Memory Elements based on a Liquid Crystalline Azobenzene Polymer.

机构信息

ISIS & icFRC, Université de Strasbourg & CNRS , 8 allée Gaspard Monge, 67000 Strasbourg, France.

Scriba Nanotecnologie , via di Corticella 183/8, 40128 Bologna, Italy.

出版信息

ACS Appl Mater Interfaces. 2016 Mar;8(10):6563-9. doi: 10.1021/acsami.5b12430. Epub 2016 Mar 1.

Abstract

Responsive polymer materials can change their properties when subjected to external stimuli. In this work, thin films of thermotropic poly(metha)acrylate/azobenzene polymers are explored as active layer in light-programmable, electrically readable memories. The memory effect is based on the reversible modifications of the film morphology induced by the photoisomerization of azobenzene mesogenic groups. When the film is in the liquid crystalline phase, the trans → cis isomerization induces a major surface reorganization on the mesoscopic scale that is characterized by a reduction in the effective thickness of the film. The film conductivity is measured in vertical two-terminal devices in which the polymer is sandwiched between a Au contact and a liquid compliant E-GaIn drop. We demonstrate that the trans → cis isomerization is accompanied by a reversible 100-fold change in the film conductance. In this way, the device can be set in a high- or low-resistance state by light irradiation at different wavelengths. This result paves the way toward the potential use of poly(metha)acrylate/azobenzene polymer films as active layer for optical input/electrical output memory elements.

摘要

响应性聚合物材料在受到外部刺激时可以改变其性质。在这项工作中,探索了热致聚(甲基)丙烯酸酯/偶氮苯聚合物的薄膜作为光可编程、电可读存储器中的活性层。记忆效应基于偶氮苯介晶基团光异构化诱导的薄膜形态的可逆变化。当薄膜处于液晶相时,顺式→反式异构化在介观尺度上诱导主要的表面重排,其特征在于薄膜的有效厚度减小。通过聚合物夹在 Au 接触和液体顺应性 E-GaIn 液滴之间的垂直两端器件测量薄膜电导率。我们证明了反式→顺式异构化伴随着薄膜电导率的可逆 100 倍变化。通过在不同波长下的光照射,器件可以设置为高电阻或低电阻状态。这一结果为聚(甲基)丙烯酸酯/偶氮苯聚合物薄膜作为光学输入/电输出存储元件的活性层的潜在应用铺平了道路。

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