基于阳极氧化铝图案和纳米压印光刻技术的氮化镓基绿色发光二极管光提取研究
Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography.
作者信息
Jiang Shengxiang, Feng Yulong, Chen Zhizhong, Zhang Lisheng, Jiang Xianzhe, Jiao Qianqian, Li Junze, Chen Yifan, Li Dongsan, Liu Lijian, Yu Tongjun, Shen Bo, Zhang Guoyi
机构信息
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
Beijing North Microelectronics Co., Ltd., Beijing 100176, China.
出版信息
Sci Rep. 2016 Feb 23;6:21573. doi: 10.1038/srep21573.
An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device.
一种晶格常数为520±40纳米、孔径为375±50纳米、高度为450±25纳米的阳极氧化铝（AAO）图案化蓝宝石衬底首先被用作纳米压印光刻（NIL）模板，并压印在绿光发光二极管（LED）的表面。与平面LED相比，显著的光提取效率（LEE）提高了116%。在AAO图案化LED的角分辨光致发光（ARPL）中，还在中心区域获得了均匀的宽突起和一些尖锐的叶瓣。增强机制与AAO图案的晶格常数波动和畴取向相关，这使得能够从LED器件中提取更多的导模。
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