Chen Lung-Chien, Kao Chien-Hong
Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan.
Sci Rep. 2022 Aug 30;12(1):14750. doi: 10.1038/s41598-022-19074-y.
In this work, we investigate the improvement in the performance of a CsPbBr perovskite light-emitting diode (PeLED) due to an anodic aluminum oxide (AAO) nanopore structure. The AAO structure in the CsPbBr PeLED structure can improve the light extraction efficiency of CsPbBr PeLEDs in two ways: the emission light in the side direction being redirected to the normal direction due to the light scattering effect caused by aluminum oxide nanopores and the effective emission area as a result of the rough surface of the AAO structure. The peak luminance, current efficiency, and external quantum efficiency (EQE) were 11,460 cd/m, 2.03 cd/A, and 0.69% at a bias of 6.0 V, respectively. For comparison, the luminance, current efficiency, and EQE values of CsPbBr PeLEDs with the AAO structure using 50 V of pore-expanding voltage demonstrated improvements of 282%, 190%, and 1280%, respectively, over CsPbBr PeLEDs without the AAO structure.
在这项工作中，我们研究了阳极氧化铝（AAO）纳米孔结构对CsPbBr钙钛矿发光二极管（PeLED）性能的提升。CsPbBr PeLED结构中的AAO结构可以通过两种方式提高CsPbBr PeLED的光提取效率：由于氧化铝纳米孔引起的光散射效应，侧向发射光被重定向到法线方向；以及AAO结构粗糙表面导致的有效发射面积增加。在6.0 V偏压下，峰值亮度、电流效率和外量子效率（EQE）分别为11460 cd/m²、2.03 cd/A和0.69%。作为对比，使用50 V扩孔电压的具有AAO结构的CsPbBr PeLED的亮度、电流效率和EQE值，相较于没有AAO结构的CsPbBr PeLED分别提高了282%、190%和1280%。
