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少层h-AlN与石墨烯的范德华堆叠:结构、相互作用和电子性质的第一性原理研究

Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties.

作者信息

dos Santos Renato B, Mota F de Brito, Rivelino R, Kakanakova-Georgieva A, Gueorguiev G K

机构信息

Instituto de Física, Universidade Federal da Bahia, 40210-340 Salvador, Bahia, Brazil. Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden.

出版信息

Nanotechnology. 2016 Apr 8;27(14):145601. doi: 10.1088/0957-4484/27/14/145601. Epub 2016 Feb 23.

Abstract

Graphite-like hexagonal AlN (h-AlN) multilayers have been experimentally manifested and theoretically modeled. The development of any functional electronics applications of h-AlN would most certainly require its integration with other layered materials, particularly graphene. Here, by employing vdW-corrected density functional theory calculations, we investigate structure, interaction energy, and electronic properties of van der Waals stacking sequences of few-layer h-AlN with graphene. We find that the presence of a template such as graphene induces enough interlayer charge separation in h-AlN, favoring a graphite-like stacking formation. We also find that the interface dipole, calculated per unit cell of the stacks, tends to increase with the number of stacked layers of h-AlN and graphene.

摘要

类石墨六方氮化铝(h-AlN)多层膜已在实验中得到证实,并进行了理论建模。h-AlN的任何功能性电子应用的发展几乎肯定需要将其与其他层状材料集成,尤其是石墨烯。在这里,通过采用范德华修正密度泛函理论计算,我们研究了少层h-AlN与石墨烯的范德华堆叠序列的结构、相互作用能和电子性质。我们发现,诸如石墨烯之类的模板的存在会在h-AlN中诱导足够的层间电荷分离,有利于形成类石墨堆叠结构。我们还发现,按堆叠的每个晶胞计算的界面偶极倾向于随着h-AlN和石墨烯堆叠层数的增加而增加。

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