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通过扫描俄歇显微镜直接测定单个半导体纳米岛中元素组成的三维分布

Direct Determination of 3D Distribution of Elemental Composition in Single Semiconductor Nanoislands by Scanning Auger Microscopy.

作者信息

Ponomaryov Semyon S, Yukhymchuk Volodymyr O, Lytvyn Peter M, Valakh Mykhailo Ya

机构信息

Institute of Semiconductor Physics, NASU, Pr. Nauky 41, Kyiv, 03028, Ukraine.

出版信息

Nanoscale Res Lett. 2016 Dec;11(1):103. doi: 10.1186/s11671-016-1308-x. Epub 2016 Feb 24.

DOI:10.1186/s11671-016-1308-x
PMID:26909783
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4766170/
Abstract

An application of scanning Auger microscopy with ion etching technique and effective compensation of thermal drift of the surface analyzed area is proposed for direct local study of composition distribution in the bulk of single nanoislands. For GexSi1 - x-nanoislands obtained by MBE of Ge on Si-substrate gigantic interdiffusion mixing takes place both in the open and capped nanostructures. Lateral distributions of the elemental composition as well as concentration-depth profiles were recorded. 3D distribution of the elemental composition in the d-cluster bulk was obtained using the interpolation approach by lateral composition distributions in its several cross sections and concentration-depth profile. It was shown that there is a germanium core in the nanoislands of both nanostructure types, which even penetrates the substrate. In studied nanostructures maximal Ge content in the nanoislands may reach about 40 at.%.

摘要

提出了一种将扫描俄歇显微镜与离子蚀刻技术相结合，并有效补偿表面分析区域热漂移的方法，用于直接局部研究单个纳米岛主体中的成分分布。对于通过在硅衬底上进行分子束外延生长获得的锗硅纳米岛，在开放和盖帽纳米结构中都发生了巨大的相互扩散混合。记录了元素组成的横向分布以及浓度-深度分布。通过纳米岛d簇主体几个横截面的横向组成分布和浓度-深度分布，采用插值方法获得了元素组成的三维分布。结果表明，两种纳米结构类型的纳米岛中都存在锗核，甚至穿透了衬底。在所研究的纳米结构中，纳米岛中的最大锗含量可达约40原子%。

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