Li Q, Liang J H, Luo Y M, Ding Z, Gu T, Hu Z, Hua C Y, Lin H-J, Pi T W, Kang S P, Won C, Wu Y Z
Department of Physics, State Key Laboratory of Surface Physics and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, People's Republic of China.
Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, Dresden 01187, Germany.
Sci Rep. 2016 Mar 2;6:22355. doi: 10.1038/srep22355.
Magnetic proximity effect between two magnetic layers is an important focus of research for discovering new physical properties of magnetic systems. Antiferromagnets (AFMs) are fundamental systems with magnetic ordering and promising candidate materials in the emerging field of antiferromagnetic spintronics. However, the magnetic proximity effect between antiferromagnetic bilayers is rarely studied because detecting the spin orientation of AFMs is challenging. Using X-ray linear dichroism and magneto-optical Kerr effect measurements, we investigated antiferromagnetic proximity effects in epitaxial CoO/NiO/MgO(001) systems. We found the antiferromagnetic spin of the NiO underwent a spin reorientation transition from in-plane to out-of-plane with increasing NiO thickness, with the existence of vertical exchange spring spin alignment in thick NiO. More interestingly, the Néel temperature of the CoO layer was greatly enhanced by the adjacent NiO layer, with the extent of the enhancement closely dependent on the spin orientation of NiO layer. This phenomenon was attributed to different exchange coupling strengths at the AFM/AFM interface depending on the relative spin directions. Our results indicate a new route for modifying the spin configuration and ordering temperature of AFMs through the magnetic proximity effect near room temperature, which should further benefit the design of AFM spintronic devices.
两个磁性层之间的磁近邻效应是发现磁系统新物理特性的重要研究焦点。反铁磁体(AFM)是具有磁有序的基本体系,也是新兴的反铁磁自旋电子学领域中很有前景的候选材料。然而,反铁磁双层之间的磁近邻效应很少被研究,因为检测反铁磁体的自旋取向具有挑战性。利用X射线线性二色性和磁光克尔效应测量,我们研究了外延CoO/NiO/MgO(001)体系中的反铁磁近邻效应。我们发现,随着NiO厚度增加,NiO的反铁磁自旋经历了从面内到面外的自旋重取向转变,在厚NiO中存在垂直交换弹簧自旋排列。更有趣的是,相邻的NiO层极大地提高了CoO层的奈尔温度,提高程度紧密依赖于NiO层的自旋取向。这种现象归因于AFM/AFM界面处取决于相对自旋方向的不同交换耦合强度。我们的结果表明了一种在室温附近通过磁近邻效应来改变反铁磁体自旋构型和有序温度的新途径,这将进一步有利于反铁磁自旋电子器件的设计。