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在三维纳米尺度特征上直接制造超薄石墨。

Direct manufacturing of ultrathin graphite on three-dimensional nanoscale features.

作者信息

Pacios Mercè, Hosseini Peiman, Fan Ye, He Zhengyu, Krause Oliver, Hutchison John, Warner Jamie H, Bhaskaran Harish

机构信息

Department of Materials, University of Oxford, Oxford, OX1 3PH United Kingdom.

Nanoworld Services GmbH, Schottkystraβe 10, 91058 Erlangen Germany.

出版信息

Sci Rep. 2016 Mar 4;6:22700. doi: 10.1038/srep22700.

Abstract

There have been many successful attempts to grow high-quality large-area graphene on flat substrates. Doing so at the nanoscale has thus far been plagued by significant scalability problems, particularly because of the need for delicate transfer processes onto predefined features, which are necessarily low-yield processes and which can introduce undesirable residues. Herein we describe a highly scalable, clean and effective, in-situ method that uses thin film deposition techniques to directly grow on a continuous basis ultrathin graphite (uG) on uneven nanoscale surfaces. We then demonstrate that this is possible on a model system of atomic force probe tips of various radii. Further, we characterize the growth characteristics of this technique as well as the film's superior conduction and lower adhesion at these scales. This sets the stage for such a process to allow the use of highly functional graphite in high-aspect-ratio nanoscale components.

摘要

在平整衬底上生长高质量大面积石墨烯已有许多成功尝试。然而,在纳米尺度上这样做至今仍受显著的可扩展性问题困扰,特别是因为需要将其精细转移到预先定义的特征上,而这必然是低产率过程,并且可能引入不期望的残留物。在此,我们描述一种高度可扩展、清洁且有效的原位方法,该方法使用薄膜沉积技术在不平坦的纳米尺度表面上连续直接生长超薄石墨(uG)。然后我们证明在各种半径的原子力探针尖端的模型系统上这是可行的。此外,我们表征了该技术的生长特性以及在这些尺度下薄膜优异的导电性和较低的附着力。这为在高纵横比纳米尺度组件中使用高功能石墨的这一过程奠定了基础。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d2e/4778042/b3643e179d9e/srep22700-f1.jpg

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