Cao Yapeng, Gan Sheng, Geng Zhaoxin, Liu Jian, Yang Yuping, Bao Qiaoling, Chen Hongda
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Sci Rep. 2016 Mar 8;6:22899. doi: 10.1038/srep22899.
Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS2-based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch.
在应用于高速通信的太赫兹技术中，控制太赫兹波的传播特性非常重要。因此，实验展示了一种基于多层二硫化钼（MoS2）和硅的新型光调谐太赫兹调制器。通过改变泵浦激光的功率，可以显著调制太赫兹传输。以退火处理作为p型掺杂方法，硅上的MoS2与裸硅相比，太赫兹调制深度提高了三倍。这种基于MoS2的器件甚至表现出比基于石墨烯的器件更高的调制效率。我们还分析了退火处理后的MoS2导致调制增强的机制，发现它与基于石墨烯的器件不同。该器件独特的光调制特性在太赫兹开关应用中展现出巨大的潜力。
