Tung Wei-Yao, Li Meng-Hsien, Wu Hung-Chin, Liu Hsin-Yu, Hsieh Yun-Ting, Chen Wen-Chang
Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan.
Chem Asian J. 2016 May 20;11(10):1631-40. doi: 10.1002/asia.201600365. Epub 2016 Apr 23.
We report pentacene-based organic field-effect transistor memory devices utilizing supramolecular electrets, consisting of a polyimide, PI(6FOH-ODPA), containing hydroxyl groups for hydrogen bonding with amine functionalized aromatic rings (AM) of 1-aniline (AM1), 2-naphthylamine (AM2), 2-aminoanthracene (AM3), and 1-aminopyrene (AM4). The effect of the phenyl ring size and composition of AM1-AM4 on the hole-trapping capability of the fabricated devices was investigated systematically. Under an operating voltage under ±40 V, the prepared devices using the electrets of 100 % AM1-AM4/PI ratios exhibited a memory window of 0, 8.59, 25.97, and 29.95 V, respectively, suggesting that the hole-trapping capability increased with enhancing phenyl ring size. The memory window was enhanced as the amount of AM in PI increased. Furthermore, the devices showed a long charge-retention time of 10(4) s with an ON/OFF current ratio of around 10(3) -10(4) and multiple switching stability over 100 cycles. This study demonstrated that the electrical characteristics of the OFET memory devices could be manipulated through the chemical compositions of the supramolecular electrets.
我们报道了基于并五苯的有机场效应晶体管存储器件,该器件利用了超分子驻极体,其由聚酰亚胺PI(6FOH - ODPA)组成,该聚酰亚胺含有用于与1 - 苯胺(AM1)、2 - 萘胺(AM2)、2 - 氨基蒽(AM3)和1 - 氨基芘(AM4)的胺官能化芳环进行氢键结合的羟基。系统地研究了AM1 - AM4的苯环尺寸和组成对所制备器件空穴俘获能力的影响。在±40 V的工作电压下,使用100% AM1 - AM4/PI比例驻极体制备的器件分别表现出0、8.59、25.97和29.95 V的存储窗口,这表明空穴俘获能力随着苯环尺寸的增大而增强。随着PI中AM含量的增加,存储窗口增大。此外,器件显示出10⁴ s的长电荷保持时间,开/关电流比约为10³ - 10⁴,并且在100次循环以上具有多次开关稳定性。这项研究表明,OFET存储器件的电学特性可以通过超分子驻极体的化学组成来调控。