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LaPt2(Si1-x Ge x )2(0 ≤ x ≤ 0.5)中超导性与电荷密度波的共存

Coexistence of superconductivity and a charge density wave in LaPt2(Si1-x Ge x )2 (0 ⩽ x ⩽ 0.5).

作者信息

Gupta Ritu, Paramanik U B, Ramakrishnan S, Rajeev K P, Hossain Z

机构信息

Department of Physics, Indian Institute of Technology, Kanpur 208016, India.

出版信息

J Phys Condens Matter. 2016 May 18;28(19):195702. doi: 10.1088/0953-8984/28/19/195702. Epub 2016 Apr 20.

DOI:10.1088/0953-8984/28/19/195702
PMID:27094445
Abstract

Interplay between a charge density wave (CDW) and superconductivity in LaPt2(Si1-x Ge x )2 has been studied by electrical transport and magnetic measurements. LaPt2Si2 crystallizes in CaBe2Ge2 type structure which shows a first order structural phase transition from tetragonal to orthorhombic accompanied by a CDW transition at 112 K and superconducting transition at around 1.22 K as confirmed by temperature dependence of resistivity and magnetic measurements. For 2[Formula: see text] doping of germanium, while the CDW temperature T CDW decreases, the superconducting transition temperature T C shows an increase. T CDW increases for 5[Formula: see text] doping of germanium and the superconducting transition decreases. These findings demonstrate the competing nature of a CDW and superconductivity.

摘要

通过电输运和磁性测量研究了LaPt2(Si1-x Ge x )2中电荷密度波(CDW)与超导性之间的相互作用。LaPt2Si2以CaBe2Ge2型结构结晶,该结构显示出从四方相到正交相的一级结构相变,伴随着在112 K时的CDW转变和在约1.22 K时的超导转变,这已通过电阻率的温度依赖性和磁性测量得到证实。对于锗的2[公式:见正文]掺杂,虽然CDW温度T CDW降低,但超导转变温度T C却升高。对于锗的5[公式:见正文]掺杂,T CDW升高而超导转变降低。这些发现证明了CDW与超导性的竞争性质。

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