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单晶LaPtSi中的超导和电荷密度波转变

Superconducting and charge density wave transition in single crystalline LaPtSi.

作者信息

Gupta Ritu, Dhar S K, Thamizhavel A, Rajeev K P, Hossain Z

机构信息

Department of Physics, Indian Institute of Technology, Kanpur 208016, India.

出版信息

J Phys Condens Matter. 2017 Jun 28;29(25):255601. doi: 10.1088/1361-648X/aa70a7. Epub 2017 May 24.

DOI:10.1088/1361-648X/aa70a7
PMID:28537225
Abstract

We present results of our comprehensive studies on single crystalline LaPtSi. Pronounced anomaly in electrical resistivity and heat capacity confirms the bulk nature of superconductivity (SC) and charge density wave (CDW) transition in the single crystals. While the charge density wave transition temperature is lower, the superconducting transition temperature is higher in single crystal compared to the polycrystalline sample. This result confirms the competing nature of CDW and SC. Another important finding is the anomalous temperature dependence of upper critical field H (T). We also report the anisotropy in the transport and magnetic measurements of the single crystal.

摘要

我们展示了对单晶LaPtSi进行全面研究的结果。电阻率和热容量中明显的异常现象证实了单晶中超导电性(SC)和电荷密度波(CDW)转变的体相性质。虽然电荷密度波转变温度较低,但与多晶样品相比,单晶中的超导转变温度较高。这一结果证实了CDW和SC的竞争性质。另一个重要发现是上临界场H(T)的异常温度依赖性。我们还报告了单晶在输运和磁性测量中的各向异性。

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