Proust Julien, Fehrembach Anne-Laure, Bedu Frédéric, Ozerov Igor, Bonod Nicolas
Aix-Marseille Université, CNRS, Centrale Marseille, Institut Fresnel, UMR7249, 13013 Marseille, France.
Aix-Marseille Université, CNRS, CINAM, UMR 7325, 13288 Marseille, France.
Sci Rep. 2016 Apr 25;6:24947. doi: 10.1038/srep24947.
Light reflection occuring at the surface of silicon wafers is drastically diminished by etching square pillars of height 110 nm and width 140 nm separated by a 100 nm gap distance in a square lattice. The design of the nanostructure is optimized to widen the spectral tolerance of the antireflective coatings over the visible spectrum for both fundamental polarizations. Angle and polarized resolved optical measurements report a light reflection remaining under 5% when averaged in the visible spectrum for both polarizations in a wide angular range. Light reflection remains almost insensitive to the light polarization even in oblique incidence.
通过在正方形晶格中蚀刻高度为110纳米、宽度为140纳米且间距为100纳米的方形柱体，硅晶片表面发生的光反射会大幅减少。对纳米结构进行了优化设计，以拓宽抗反射涂层在可见光谱范围内对两种基本偏振的光谱容忍度。角度分辨和偏振分辨光学测量结果表明，在宽角度范围内，两种偏振在可见光谱中的平均光反射率均保持在5%以下。即使在斜入射时，光反射对光的偏振也几乎不敏感。
