Yamada K, Yamada M, Maki H, Itoh K M
School of Fundamental Science and Technology, Keio University, Yokohama 223-8522, Japan.
Nanotechnology. 2018 Jul 13;29(28):28LT01. doi: 10.1088/1361-6528/aac04b. Epub 2018 Apr 26.
Fabrication of a 2D square lattice array of intentionally tapered micro-/nano-silicon pillars by metal-assisted chemical etching (MACE) of silicon wafers is reported. The pillars are square rod shaped with the cross-sections in the range 0.2 × 0.2-0.9 × 0.9 μm and heights 3-7 μm. The spacing between pillars in the 2D square lattice was controlled between 0.5 and 3.0 μm. While the pillars after MACE had the high aspect ratio ∼1:5, subsequent anisotropic wet etching in potassium hydroxide solution led to 80°-89.5° tapers with smooth sidewalls. The resulting taper angle showed the relation with geometry of pillar structures; the spacing 0.5-3.0 μm led to the tapering angle 89.5°-80° for 3 and 5 μm tall pillars but 7 μm tall pillars showed no dependency between the tapering angle and the inter-pillar spacing. Such an array of silicon tapered-rods with smooth sidewalls is expected to be applicable as a mold in nanoimprinting applications.
报道了通过对硅片进行金属辅助化学蚀刻(MACE)制备有意变细的微/纳米硅柱二维方形晶格阵列。这些柱子是方棒形状,横截面范围为0.2×0.2 - 0.9×0.9μm,高度为3 - 7μm。二维方形晶格中柱子之间的间距控制在0.5至3.0μm之间。虽然MACE后的柱子具有约1:5的高纵横比,但随后在氢氧化钾溶液中进行各向异性湿法蚀刻会产生侧壁光滑的80° - 89.5°锥度。所得锥角与柱结构的几何形状有关;对于3μm和5μm高的柱子,0.5 - 3.0μm的间距导致锥角为89.5° - 80°,但7μm高的柱子在锥角和柱间距之间没有相关性。这种具有光滑侧壁的硅锥形棒阵列有望用作纳米压印应用中的模具。