Vasseur Guillaume, Abadia Mikel, Miccio Luis A, Brede Jens, Garcia-Lekue Aran, de Oteyza Dimas G, Rogero Celia, Lobo-Checa Jorge, Ortega J Enrique
Centro de Física de Materiales (Consejo Superior de Investigaciones Científicas (CSIC)/Universidad del País Vasco (UPV)-Euskal Herriko Unibertsitatea (EHU)-Materials Physics Center (MPC) , Paseo Manuel Lardizabal 5, 20018 San Sebastián, Spain.
Donostia International Physics Center (DIPC) , Paseo Manuel Lardizabal 4, 20018 San Sebastián, Spain.
J Am Chem Soc. 2016 May 4;138(17):5685-92. doi: 10.1021/jacs.6b02151. Epub 2016 Apr 26.
Surface-confined dehalogenation reactions are versatile bottom-up approaches for the synthesis of carbon-based nanostructures with predefined chemical properties. However, for devices generally requiring low-conductivity substrates, potential applications are so far severely hampered by the necessity of a metallic surface to catalyze the reactions. In this work we report the synthesis of ordered arrays of poly(p-phenylene) chains on the surface of semiconducting TiO2(110) via a dehalogenative homocoupling of 4,4″-dibromoterphenyl precursors. The supramolecular phase is clearly distinguished from the polymeric one using low-energy electron diffraction and scanning tunneling microscopy as the substrate temperature used for deposition is varied. X-ray photoelectron spectroscopy of C 1s and Br 3d core levels traces the temperature of the onset of dehalogenation to around 475 K. Moreover, angle-resolved photoemission spectroscopy and tight-binding calculations identify a highly dispersive band characteristic of a substantial overlap between the precursor's π states along the polymer, considered as the fingerprint of a successful polymerization. Thus, these results establish the first spectroscopic evidence that atomically precise carbon-based nanostructures can readily be synthesized on top of a transition-metal oxide surface, opening the prospect for the bottom-up production of novel molecule-semiconductor devices.
表面受限脱卤反应是一种通用的自下而上的方法,用于合成具有预定化学性质的碳基纳米结构。然而,对于通常需要低电导率衬底的器件来说,由于需要金属表面来催化反应,其潜在应用目前受到严重阻碍。在这项工作中,我们报道了通过4,4″-二溴三联苯前体的脱卤均偶联反应,在半导体TiO₂(110)表面合成聚对亚苯基链的有序阵列。当用于沉积的衬底温度变化时,利用低能电子衍射和扫描隧道显微镜可以清楚地将超分子相与聚合物相区分开来。C 1s和Br 3d核心能级的X射线光电子能谱将脱卤起始温度追踪到约475 K。此外,角分辨光电子能谱和紧束缚计算确定了一个高度色散的能带,其特征是前体沿聚合物的π态之间有大量重叠,这被视为成功聚合的指纹。因此,这些结果建立了第一个光谱证据,表明原子精确的碳基纳米结构可以很容易地在过渡金属氧化物表面上合成,为自下而上制备新型分子半导体器件开辟了前景。