Galeotti Gianluca, Fritton Massimo, Lackinger Markus
Deutsches Museum, Museumsinsel 1, 80538, Munich, Germany.
Department of Physics, Technische Universität München, James-Franck-Str. 1, 85748, Garching, Germany.
Angew Chem Int Ed Engl. 2020 Dec 7;59(50):22785-22789. doi: 10.1002/anie.202010833. Epub 2020 Oct 29.
To facilitate C-C coupling in on-surface synthesis on inert surfaces, we devised a radical deposition source (RDS) for the direct deposition of aryl radicals onto arbitrary substrates. Its core piece is a heated reactive drift tube through which halogenated precursors are deposited and en route converted into radicals. For the proof of concept we study 4,4''-diiodo-p-terphenyl (DITP) precursors on iodine-passivated metal surfaces. Deposition with the RDS at room temperature results in highly regular structures comprised of mostly monomeric (terphenyl) or dimeric (sexiphenyl) biradicals. Mild heating activates progressive C-C coupling into more extended molecular wires. These structures are distinctly different from the self-assemblies observed upon conventional deposition of intact DITP. Direct deposition of radicals renders substrate reactivity unnecessary, thereby paving the road for synthesis on application-relevant inert surfaces.
为了促进惰性表面上的表面合成中的碳-碳偶联,我们设计了一种自由基沉积源(RDS),用于将芳基自由基直接沉积到任意底物上。其核心部件是一个加热的反应漂移管,卤化前体通过该漂移管沉积,并在途中转化为自由基。为了验证概念,我们研究了碘钝化金属表面上的4,4''-二碘对三联苯(DITP)前体。在室温下用RDS进行沉积会产生高度规则的结构,主要由单体(三联苯)或二聚体(六联苯)双自由基组成。温和加热会激活逐步的碳-碳偶联,形成更长的分子线。这些结构与完整DITP常规沉积时观察到的自组装明显不同。自由基的直接沉积使得底物反应性不再必要,从而为在与应用相关的惰性表面上进行合成铺平了道路。