Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shannxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an, 710049, China.
Nanoscale. 2016 Jun 7;8(21):11084-90. doi: 10.1039/c6nr01092j. Epub 2016 May 13.
Although organometal halide perovskite materials have shown great potential in light-emitting diodes, their performance is greatly restricted by the poor morphology of the perovskite layer. In this work, we demonstrate a facile one-step solution method to improve the perovskite film morphology via a non-solvent/solvent mixture. An efficient CH3NH3PbBr3-based light-emitting diode was prepared with a chlorobenzene/N,N-dimethylformamide mixed solvent. A high efficiency of 0.54 cd A(-1) is demonstrated, which is 22 times higher than that of a device fabricated by a traditional one-step solution process. Furthermore, the uniformity of the emission region and the device stability are strongly improved by this facile one-step solution process. Our work paves a new way for the morphological control of perovskite films for application in light-emitting diodes.
虽然金属有机卤化物钙钛矿材料在发光二极管中表现出巨大的潜力，但它们的性能受到钙钛矿层形貌差的极大限制。在这项工作中，我们通过非溶剂/溶剂混合物展示了一种简单的一步溶液法来改善钙钛矿薄膜的形态。采用氯苯/N，N-二甲基甲酰胺混合溶剂制备了高效的 CH3NH3PbBr3 基发光二极管。展示了高达 0.54 cd A(-1) 的高效率，比采用传统一步溶液工艺制备的器件高出 22 倍。此外，通过这种简单的一步溶液工艺，显著改善了发射区域的均匀性和器件稳定性。我们的工作为应用于发光二极管的钙钛矿薄膜的形态控制开辟了一条新途径。
