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以经高极性醇类溶剂处理的PEDOT:PSS作为空穴传输层的高亮度钙钛矿发光二极管。

High-luminance perovskite light-emitting diodes with high-polarity alcohol solvent treating PEDOT:PSS as hole transport layer.

作者信息

Wu Mengge, Zhao Dan, Wang Zijun, Yu Junsheng

机构信息

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China.

出版信息

Nanoscale Res Lett. 2018 Apr 27;13(1):128. doi: 10.1186/s11671-018-2505-6.

Abstract

BACKGROUND

Perovskite light-emitting diodes (PeLEDs) are fabricated with a structure of indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/CHNHPbBr (MAPbBr)/1,3,5-tris(2-N-phenylbenzimidazolyl) benzene (TPBi)/Ag.

PEDOT

PSS films treated with alcohols including methanol, ethanol, and isopropanol are used to realize high-performance PeLEDs. Among them, by using PEDOT:PSS film treated by methanol as the hole transport layer, the PeLED with a maximum luminance of 2075 cd m and a maximum current efficiency of 0.38 cd A is achieved. Meanwhile, the result shows that the luminance of PeLEDs increases with the polarity of alcohol solvent. The conductivity of PEDOT:PSS films and crystallization of perovskite films are analyzed to gain a deep illumination into the influence of alcohol solvent treatment on device performance. It is also found that the treatment brings not only an improved hole injection capability but also a significantly enhanced crystallization of perovskite. This work indicates that our founding brings a simple and effective method to improve the device performance of PeLEDs.

摘要

背景

钙钛矿发光二极管(PeLEDs)采用氧化铟锡(ITO)/聚(3,4 - 乙撑二氧噻吩):聚苯乙烯磺酸盐(PEDOT:PSS)/CH₃NH₃PbBr₃(MAPbBr₃)/1,3,5 - 三(2 - N - 苯基苯并咪唑基)苯(TPBi)/银的结构制备。

用包括甲醇、乙醇和异丙醇在内的醇类处理的PEDOT:PSS薄膜用于实现高性能的PeLEDs。其中,通过使用经甲醇处理的PEDOT:PSS薄膜作为空穴传输层,实现了最大亮度为2075 cd/m²且最大电流效率为0.38 cd/A的PeLED。同时,结果表明PeLEDs的亮度随醇类溶剂的极性增加。对PEDOT:PSS薄膜的电导率和钙钛矿薄膜的结晶情况进行了分析,以深入了解醇类溶剂处理对器件性能的影响。还发现该处理不仅带来了改善的空穴注入能力,而且显著增强了钙钛矿的结晶。这项工作表明我们的发现为提高PeLEDs的器件性能带来了一种简单有效的方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0b02/5919892/c3f0b934ea72/11671_2018_2505_Fig1_HTML.jpg

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