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半导体中的超快巨自旋注入

Ultrafast and Gigantic Spin Injection in Semiconductors.

作者信息

Battiato M, Held K

机构信息

Institute of Solid State Physics, Vienna University of Technology, Vienna 1040, Austria.

出版信息

Phys Rev Lett. 2016 May 13;116(19):196601. doi: 10.1103/PhysRevLett.116.196601. Epub 2016 May 11.

Abstract

The injection of spin currents in semiconductors is one of the big challenges of spintronics. Motivated by the ultrafast demagnetization and spin injection into metals, we propose an alternative femtosecond route based on the laser excitation of superdiffusive spin currents in a ferromagnet such as Ni. Our calculations show that even though only a fraction of the current crosses the Ni-Si interface, the laser-induced creation of strong transient electrical fields at a ferromagnet-semiconductor interface allows for the injection of chargeless spin currents with record spin polarizations of 80%. Beyond that they are pulsed on the time scale of 100 fs which opens the door for new experiments and ultrafast spintronics.

摘要

在半导体中注入自旋电流是自旋电子学面临的重大挑战之一。受超快退磁以及向金属中注入自旋电流的启发,我们提出了一种基于对诸如镍等铁磁体中超扩散自旋电流进行激光激发的飞秒替代方法。我们的计算表明,尽管只有一小部分电流穿过镍 - 硅界面,但在铁磁体 - 半导体界面处由激光诱导产生的强瞬态电场能够注入具有80%的创纪录自旋极化率的无电荷自旋电流。除此之外,它们在100飞秒的时间尺度上呈脉冲状,这为新的实验和超快自旋电子学打开了大门。

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